| 1 | 2017-12-31 | 7-1 | IJSSTDEC20171 | A Comparative Study of Sub-10nm Si, Ge and GaAs n-Channel FinFET | 2-8-1510398684-Abs.1.IJSSTDEC20171.pdf | Shafiqul Islam et al., | 1-6 |
| 2 | 2019-06-30 | 9-1 | IJSSTJUN20191 | Performance Comparison of Electrical Parameter between GaNFinFET and Si-FinFET Nano Devices | 2-8-1567764603-abs1IJSSTJUN20191.pdf | Anindya Shubro Chakroborty et al., | 1-12 |
| 3 | 2019-06-30 | 9-1 | IJSSTJUN20192 | Designing A New Reversible Adder/Subtractor Circuit for Low Power ALU Application | 2-8-1553332587-abs.2.IJSSTJUN20192.pdf | Disha A. Tiwade & R. Anitha | 13-22 |
| 4 | 2020-06-30 | 10–1 | IJSSTJUN20201 | Synthesis and Photoluminescence Properties of Sm3+ Doped Kmgpo4 Phosphor for White Light-Emitting Diodes | 2-8-1590833303-abs.IJSSTJUN20201.pdf | Sarvjeet Singh | 1-6 |
| 5 | 2021-12-31 | 11–2 | IJSSTDEC20211 | “Numerical Simulation of the Electrical Characteristics of Nanoscale Tg N-Finfet with the Variation of Gate Dielectric Materials” | 2-8-1623818035-abs1IJSSTDEC20211.pdf | Mostak Ahmed et al., | 1-10 |