International Journal of Semiconductor Science & Technology (IJSST)
  • ISSN(Print) : 2250-1576
  • ISSN(Online) : 2278-9405
  • Impact Factor(JCC) : 8.5861
  • NAAS Rating : 3.27
  • IBI Factor : 3.2
to
Reset
Quick Menus
Sl. No. Issue Date Vol - Issue Paper Id Title Abstract Author Page No
31 Apr-30 2016 6-2 IJSSTAPR20161

A Study on the Influence of Nonradiative Recombination Lifetime on the Route to Chaos of Semiconductor Laser

 Abstract

Salah Abdulrhmann

 1-14
32 Apr-30 2016 6-2 IJSSTAPR20162

Demonstration of Electrical Transport and Photo Response Properties of Nano Pbs / N-Si Hetero Junction Grown by Chemical Bath Deposition

 Abstract

Ali M. Mous et al.,

 15-22
33 Apr-30 2016 6-2 IJSSTAPR20163

A Study on Thermal Noise Performance of Various Substrates with Respect to different Oxides

 Abstract

Saradindu Panda et al.,

 23-28
34 Dec-31 2017 7-1 IJSSTDEC20171

A Comparative Study of Sub-10nm Si, Ge and GaAs n-Channel FinFET

DOI : 10.24247/ijsstdec20171		 Abstract Shafiqul Islam et al., 1-6
35 Jun-30 2019 9-1 IJSSTJUN20191

Performance Comparison of Electrical Parameter between GaNFinFET and Si-FinFET Nano Devices

DOI : 10.24247/ijsstjun20191		 Abstract Anindya Shubro Chakroborty et al., 1-12
36 Jun-30 2019 9-1 IJSSTJUN20192

Designing A New Reversible Adder/Subtractor Circuit for Low Power ALU Application

DOI : 10.24247/ijsstjun20192		 Abstract Disha A. Tiwade & R. Anitha 13-22
37 Jun-30 2020 10–1 IJSSTJUN20201

Synthesis and Photoluminescence Properties of Sm3+ Doped Kmgpo4 Phosphor for White Light-Emitting Diodes

DOI : 10.24247/ijsstjun20201		 Abstract Sarvjeet Singh 1-6
38 Dec-31 2021 11–2 IJSSTDEC20211

“Numerical Simulation of the Electrical Characteristics of Nanoscale Tg N-Finfet with the Variation of Gate Dielectric Materials”

DOI : 10.24247/ ijsstdec20211		 Abstract Mostak Ahmed et al., 1-10
Quick Menus